Tag: GaN
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Electro-optical modulation of terahertz beam by drifting space-charge domains in n-GaN epilayers
The research article by Roman B. Balagula, Liudvikas Subačius, Paweł Prystawko, and Irmantas Kašalynas is published in Journal of Applied Physics, AIP Publishing. The work entitled “Electro-optical modulation of terahertz beam by drifting space-charge domains in n-GaN epilayers” investigates the transmission modulation of THz field in GaN semiconductor as a response to space-charge domains under…
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New study on formation and drift of space-charge domains with velocity of sound in n-type GaN
New paper by Roman Balagula et al. under the title ”Space-charge domains in n-type GaN epilayers under pulsed electric field” is published in the Applied Physics Letters. The experimental work investigates the formation and drift of space-charge domains with velocity of sound in n-type GaN. The findings defines the constraints for the design of GaN-based…